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SINGLE PHASE LEAD-FREE CUBIC PYROCHLORE BISMUTH ZINC NIOBATE-BASED DIELECTRIC MATERIALS AND PROCESSES FOR MANUFACTURE
SINGLE PHASE LEAD-FREE CUBIC PYROCHLORE BISMUTH ZINC NIOBATE-BASED DIELECTRIC MATERIALS AND PROCESSES FOR MANUFACTURE
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机译:单相无铅立方焦绿双铋铌酸锌基介电材料及其制造工艺
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摘要
Both single phase lead-free cubic pyrochlore bismuth zinc niobate (BZN)-based dielectric materials with a chemical composition of Bi1.5Zn(0.5+y)Nb(1.5−x)Ta(x)O(6.5+y), with 0≦x0.23 and 0≦y0.9 and films with these average compositions with Bi2O3 particles in an amorphous matrix and a process of manufacture thereof. The crystalline BZNT-based dielectric material has a relative permittivity of at least 120, a maximum applied electric field of at least 4.0 MV/cm at 10 kHz, a maximum energy storage at 25° C. and 10 kHz of at least 50 J/cm3 and a maximum energy storage at 200° C. and 10 kHz of at least 22 J/cm3. The process is a wet chemical process that produces thin films of Bi1.5Zn(0.5+y)Nb(1.5−x)Ta(x)O(6.5+y) without the use of 2-methoxyethanol and pyridine.
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机译:化学成分为Bi 1.5 Sub> Zn (0.5 + y) Sub> Nb ()的单相无铅立方烧绿石铌酸锌铋(BZN)基介电材料1.5−x) Sub> Ta (x) Sub> O (6.5 + y) Sub>,其中0≦x <0.23和0≦y <0.9,并且这些平均值非晶态基体中具有Bi 2 Sub> O 3 Sub>颗粒的碳纳米管组成及其制备方法。结晶的基于BZNT的介电材料具有至少120的相对介电常数,在10 kHz时的最大施加电场至少4.0 MV / cm,在25°C和10 kHz时的最大能量存储至少50 J / cm 3 Sup>,在200°C和10 kHz时的最大能量存储至少为22 J / cm 3 Sup>。此过程是湿化学过程,可产生Bi 1.5 Sub> Zn (0.5 + y) Sub> Nb (1.5−x) Sub> Ta (x) Sub> O (6.5 + y) Sub>,而无需使用2-甲氧基乙醇和吡啶。
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