FRONT-TO-BACK BONDING WITH THROUGH-SUBSTRATE VIA (TSV)

摘要

Methods for forming a semiconductor device structure are provided. The method includes providing a first semiconductor wafer and a second semiconductor wafer. A first transistor is formed in a front-side of the first semiconductor wafer, and no devices are formed in the second semiconductor wafer. The method further includes bonding the front-side of the first semiconductor wafer to a backside of the second semiconductor wafer and thinning a front-side of the second semiconductor wafer. After thinning the second semiconductor wafer, a second transistor is formed in the front-side of the second semiconductor wafer. At least one first through substrate via (TSV) is formed in the second semiconductor wafer, and the first TSV directly contacts a conductive feature of the first semiconductor wafer.