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EMBEDDED DRAM IN REPLACEMENT METAL GATE TECHNOLOGY
EMBEDDED DRAM IN REPLACEMENT METAL GATE TECHNOLOGY
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机译:嵌入式金属门技术中的嵌入式DRAM
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摘要
Methods for forming an eDRAM with replacement metal gate technology and the resulting device are disclosed. Embodiments include forming first and second dummy electrodes on a substrate, each dummy electrode having spacers at opposite sides and being surrounded by an ILD; removing the first and second dummy electrodes, forming first and second cavities, respectively; forming a hardmask over the substrate, exposing the first cavity; forming a deep trench in the substrate through the first cavity; removing the hardmask; and forming a capacitor in the first cavity and deep trench and concurrently forming an access transistor in the second cavity.
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