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Gate-tunable P-N heterojunction diode, and fabrication method and application of same
Gate-tunable P-N heterojunction diode, and fabrication method and application of same
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机译:栅极可调的p-n异质结二极管及其制造方法和应用
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摘要
One aspect of the invention relates to a gate-tunable p-n heterojunction diode including a vertical stacked heterojunction of two ultrathin semiconductors. In one embodiment, single-layer molybdenum disulphide of an n-type semiconductor are stacked below semiconducting single-walled carbon nanotubes of a p-type semiconductor with each of them connected to a gold electrodes to form a p-n heterojunction. The electrical properties of the p-n heterojunction can be modulated by a gate voltage applied to a gate electrode and range from an insulator to a linear-response resistor to a highly rectifying diode. The gate tunability of the p-n heterojunction also allows spectral control over the photoresponse.
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