BLANK OF TIO2-SIO2 GLASS FOR A MIRROR SUBSTRATE FOR USE IN EUV LITHOGRAPHY AND METHOD FOR THE PRODUCTION THEREOF

摘要

A blank of TiO₂—SiO₂ glass for a mirror substrate for use in EUV lithography has a low need for adaptation to optimize the progression of the coefficient of thermal expansion, and consequently also the progression of the zero crossing temperature T_zc. The TiO₂—SiO₂ glass has at a mean value of the fictive temperature T_f in the range between 920° C. and 970° C. a dependence expressed as the differential quotient dT_zc/dT_f of its zero crossing temperature T_zc on the fictive temperature T_f of less than 0.3.