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Method for Preventing Delamination and Cracks in Group III-V Wafers
Method for Preventing Delamination and Cracks in Group III-V Wafers
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机译:防止III-V族晶片中的分层和裂纹的方法
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摘要
In an exemplary implementation, a method includes growing a III-Nitride body over a group IV substrate in a semiconductor wafer. The method includes forming at least one device layer over the III-Nitride body. The method also includes etching grid array trenches in the III-Nitride body, where the etching of the grid array trenches may extend into the group IV substrate. The method can also include forming an edge trench around a perimeter of the semiconductor wafer. The method further includes forming separate dies by cutting the semiconductor wafer approximately along the grid array trenches.
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