首页> 外国专利> MASKS FORMED BASED ON INTEGRATED CIRCUIT LAYOUT DESIGN HAVING CELL THAT INCLUDES EXTENDED ACTIVE REGION

MASKS FORMED BASED ON INTEGRATED CIRCUIT LAYOUT DESIGN HAVING CELL THAT INCLUDES EXTENDED ACTIVE REGION

机译:基于集成电路布局设计的模板,其中包含具有扩展活动区域的单元格

摘要

A set of masks corresponds to an integrated circuit layout. The integrated circuit layout includes a first cell having a first transistor region and a second transistor region, and a second cell having a third transistor region and a fourth transistor region. The first cell and the second cell adjoin each other at side cell boundaries thereof, the first transistor region and the third transistor region are formed in a first continuous active region, and the second transistor region and the fourth transistor region are formed in a second continuous active region. The set of masks is formed based on the integrated circuit layout.
机译:一组掩模对应于集成电路布局。该集成电路布局包括具有第一晶体管区域和第二晶体管区域的第一单元,以及具有第三晶体管区域和第四晶体管区域的第二单元。第一单元和第二单元在其侧单元边界处彼此邻接,第一晶体管区域和第三晶体管区域形成在第一连续有源区域中,并且第二晶体管区域和第四晶体管区域形成在第二连续有源区域中。活动区域。基于集成电路布局形成掩模组。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号