Programming nonvolatile memory based on statistical analysis of charge level distributions of memory cells

摘要

A system including a read module, a delay buffer, and a least mean square module. The read module is configured to read charge levels of memory cells of a nonvolatile memory and to generate read signals based on the charge levels of the memory cells of the nonvolatile memory. The delay buffer is configured to delay the read signals and to generate delayed read signals. The least mean square module is configured to generate mean values of the charge levels used to program the memory cells based on (i) differences between the read signals and the delayed read signals and (ii) a scaling factor. The scaling factor is based on variations in the charge levels due to cycling of the memory cells of the nonvolatile memory.