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METHODS OF REMOVING RESIDUAL POLYMERS FORMED DURING A BORON-DOPED AMORPHOUS CARBON LAYER ETCH PROCESS
METHODS OF REMOVING RESIDUAL POLYMERS FORMED DURING A BORON-DOPED AMORPHOUS CARBON LAYER ETCH PROCESS
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机译:去除掺硼非晶碳层刻蚀过程中残留的聚合物的方法
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摘要
Methods for removing residual polymers formed during etching of a boron-doped amorphous carbon layer are provided herein. In some embodiments, a method of etching a feature in a substrate includes: exposing a boron doped amorphous carbon layer disposed on the substrate to a first plasma through a patterned mask layer to etch a feature into the boron doped amorphous carbon layer, wherein the first plasma is formed from a first process gas that reacts with the boron doped amorphous carbon layer to form residual polymers proximate a bottom of the feature; and exposing the residual polymers to a second plasma through the patterned mask layer to etch the residual polymers proximate the bottom of the feature, wherein the second plasma is formed from a second process gas comprising nitrogen (N2), oxygen (O2), hydrogen (H2), and methane (CH4).
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