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III-N material grown on REN epitaxial buffer on Si substrate
III-N material grown on REN epitaxial buffer on Si substrate
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机译:在Si衬底上的REN外延缓冲层上生长的III-N材料
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摘要
A method of growing III-N material on a silicon substrate includes the steps of epitaxially growing a single crystal rare earth oxide on a silicon substrate, epitaxially growing a single crystal rare earth nitride on the single crystal rare earth oxide, and epitaxially growing a layer of single crystal III-N material on the single crystal rare earth nitride.
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