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Gallium-nitride-based light emitting diodes with multiple potential barriers
Gallium-nitride-based light emitting diodes with multiple potential barriers
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机译:具有多个势垒的氮化镓基发光二极管
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摘要
A light emitting diode (LED) includes an active layer having one or more multilayer potential barriers and at least one well layer. Each multilayer potential barrier includes interlacing first and second InAlGaN thin layers. The first and second InAlGaN thin layers have compositions selected with respect to the well layer such that a polarization effect is substantially reduced.
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