首页> 外国专利> Non-volatile memory device capable of minimizing instant current consumption and performing memory operations in parallel, and method for operating the same, and system including the same

Non-volatile memory device capable of minimizing instant current consumption and performing memory operations in parallel, and method for operating the same, and system including the same

机译:能够使瞬时电流消耗最小并且并行执行存储器操作的非易失性存储器设备,用于操作其的方法以及包括该非易失性存储器的系统

摘要

Disclosed are a non-volatile memory device capable of performing memory operations in parallel and a method for operating the non-volatile memory device, and a system including the non-volatile memory device. A non-volatile memory system may include a memory controller suitable for controlling a memory; and the memory suitable for performing read and program operations in response to commands from the memory controller, and wherein the memory controller and the memory operate in a high interface mode, and operate in a low interface mode when an operation to read internal data or an operation to receive (N+1)th data is performed during an operation to program Nth data in the memory.
机译:公开了一种能够并行执行存储操作的非易失性存储设备,用于操作该非易失性存储设备的方法以及包括该非易失性存储设备的系统。非易失性存储系统可以包括适合于控制存储器的存储器控​​制器;以及用于控制存储器的存储器控​​制器。以及适于响应于来自存储控制器的命令而执行读取和编程操作的存储器,其中,当读取内部数据或读取存储器的操作时,存储控制器和存储器以高接口模式操作,并且以低接口模式操作。在存储器中对第N个数据进行编程的操作期间,执行接收第(N + 1)个数据的操作。

著录项

  • 公开/公告号US9378134B2

    专利类型

  • 公开/公告日2016-06-28

    原文格式PDF

  • 申请/专利权人 SK HYNIX INC.;

    申请/专利号US201314103505

  • 发明设计人 EUI-JIN KIM;BYOUNG-SUNG YOO;JUN-RYE RHO;

    申请日2013-12-11

  • 分类号G06F12/02;

  • 国家 US

  • 入库时间 2022-08-21 14:29:37

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