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Methods and apparatuses for effectively reducing gas residence time in a plasma processing chamber

机译:用于有效减少等离子体处理室内气体停留时间的方法和装置

摘要

Methods and apparatuses for controlling plasma generation in a plasma processing chamber to reduce an effective residence time of by-product gases or to control in real time the concentration of certain polymer pre-cursors or reaction by-products in the plasma processing chamber are disclosed. The gas residence time is “effectively” reduced by reducing the plasma reaction for at least a portion of the process time. Thresholds can be provided to control when the plasma reaction is permitted to proceed at the full rate and when the plasma reaction is permitted to proceed at the reduced rate. By reducing the rate of plasma by-product generation at least for a portion of the process time, the by-product gas residence time may be effectively reduced to improve process results.
机译:公开了用于控制等离子体处理室中的等离子体产生以减少副产物气体的有效停留时间或实时控制某些聚合物前体或反应副产物在等离子体处理室中的浓度的方法和设备。通过在至少一部分处理时间内减少等离子体反应,可以“有效地”减少气体停留时间。可以提供阈值来控制何时允许等离子体反应以全速率进行以及何时允许等离子体反应以降低的速率进行。通过至少在一部分处理时间内降低等离子体副产物的产生速率,可以有效地减少副产物气体的停留时间以改善处理结果。

著录项

  • 公开/公告号US9299541B2

    专利类型

  • 公开/公告日2016-03-29

    原文格式PDF

  • 申请/专利权人 ANDREAS FISCHER;

    申请/专利号US201213436728

  • 发明设计人 ANDREAS FISCHER;

    申请日2012-03-30

  • 分类号H01J37/32;

  • 国家 US

  • 入库时间 2022-08-21 14:29:03

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