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METHODS AND APPARATUSES FOR EFFECTIVELY REDUCING GAS RESIDENCE TIME IN A PLASMA PROCESSING CHAMBER

机译:有效减少等离子体处理室中气体停留时间的方法和装置

摘要

Methods and apparatus are disclosed for controlling plasma generation within a plasma processing chamber to reduce the effective residence time of byproduct gases or to control the concentration of a particular polymer precursor or reaction byproducts in real time in the plasma processing chamber. Gas residence time is "effectively" reduced by reducing the plasma reaction for at least a portion of the process time. Thresholds may be provided to control when the plasma reaction is allowed to proceed at full rate and when the plasma reaction is allowed to proceed at reduced rate. By reducing the plasma byproduct generation rate for at least a portion of the process time, the byproduct gas residence time may be effectively reduced to improve process results.
机译:公开了用于控制等离子体处理室内的等离子体产生以减少副产物气体的有效停留时间或实时控制特定聚合物前体或反应副产物在等离子体处理室内的浓度的方法和装置。通过减少至少一部分处理时间的等离子体反应,“有效”地减少了气体停留时间。可以提供阈值来控制何时允许等离子体反应以全速率进行以及何时允许等离子体反应以降低的速率进行。通过在至少一部分处理时间中降低等离子体副产物的产生速率,可以有效地减少副产物气体的停留时间以改善处理结果。

著录项

  • 公开/公告号KR102065803B1

    专利类型

  • 公开/公告日2020-02-11

    原文格式PDF

  • 申请/专利权人 램 리써치 코포레이션;

    申请/专利号KR20147030420

  • 发明设计人 피셔 안드레아스;

    申请日2013-03-22

  • 分类号H05H1/24;H01L21/3065;

  • 国家 KR

  • 入库时间 2022-08-21 11:05:35

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