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Gas Flow Characteristics in a Plasma Process Chamber and Proposal of New Pulse-Controlled Gas Injection Method Using Interference Matrix Operation for Rapid Stabilization of Gas Pressure

机译:等离子处理室内的气体流动特性和采用干扰矩阵运算以快速稳定气压的新型脉冲控制气体注入方法的建议

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摘要

To realize precise and high-throughput multiprocesses in a single plasma process chamber with a rapid alternative of multiple gases, gas flow characteristics in a plasma process chamber are investigated and a pulse-controlled gas injection method is developed. It is found that gas replacement characteristics greatly depend on the gas supply method used. An upper shower plate has a great advantage in realizing a rapid gas replacement over the case without using the upper shower plate, resulting from the realization of the down flow pattern of feed gas in the chamber. The pulse-controlled gas injection method employs the intentional overshoot pulse at the beginning of gas supply to rapidly stabilize gas pressure. Interference matrix operation is newly introduced to determine the pulse size for the arbitrary gas flow pattern in the chamber. The optimum pulse size can be successfully obtained in the case of HBr addition to a pure Ar plasma.
机译:为了在单个等离子处理室中实现精确且高通量的多处理并快速替代多种气体,研究了等离子处理室中的气体流动特性,并开发了脉冲控制气体注入方法。已经发现,气体替代特性在很大程度上取决于所使用的气体供应方法。上喷淋板在不使用上喷淋板的情况下实现了与壳体的快速气体置换方面具有很大的优势,这是由于实现了腔室内的进料气的向下流动模式。脉冲控制的气体注入方法在气体供应开始时采用故意的过冲脉冲,以快速稳定气体压力。新引入了干涉矩阵运算来确定腔室内任意气流模式的脉冲大小。如果将HBr添加到纯Ar等离子体中,则可以成功获得最佳脉冲大小。

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  • 来源
    《Japanese journal of applied physics》 |2012年第1issue1期|p.016001.1-016001.8|共8页
  • 作者单位

    Technology Collaboration Center, Research and Development HQ, OMRON Corporation, Kyoto 619-0283, Japan;

    New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan;

    New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan;

    New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan;

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