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Apparatuses including a memory array with separate global read and write lines and/or sense amplifier region column select line and related methods
Apparatuses including a memory array with separate global read and write lines and/or sense amplifier region column select line and related methods
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机译:包括具有单独的全局读和写线和/或读出放大器区域列选择线的存储器阵列的设备以及相关方法
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摘要
Apparatuses and methods for memory arrays with separate global read and write lines and/or sense amplifier region column select lines are disclosed. An example apparatus includes first and second memory sections, and further includes a sense amplifier region. A memory section includes a word line extending in a first direction and a digit line extending in a second direction, and the sense amplifier region is disposed between the first and second memory sections. The sense amplifier region includes a sense amplifier coupled to the digit line, a local input/output (LIO) line, a column select circuit coupled to the sense amplifier, and a column select line. The column select line extends in the first direction and is configured to provide a column select signal to the column select circuit. Capacitance of a LIO line may be reduced by coupling fewer sense amplifiers of a group to the LIO line.
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