首页> 外国专利> Data writing and reading method, and memory controller and memory storage apparatus using the same for improving reliability of data access

Data writing and reading method, and memory controller and memory storage apparatus using the same for improving reliability of data access

机译:数据写入和读取方法以及使用该方法的存储器控​​制器和存储器存储设备,以提高数据访问的可靠性

摘要

A data writing method for a rewritable non-volatile memory module is provided. The present method includes compressing an original data to generate a first data and determining whether the length of the first data is smaller than a predetermined length. The present method also includes outputting the first data as a compressed data when the length of the first data is not smaller than the predetermined length. The present method further includes generating an ECC code corresponding to the compressed data, generating an ECC frame according to the compressed data and the ECC code, and writing the ECC frame into the rewritable non-volatile memory module. Accordingly, when data corresponding to the original data is read from the rewritable non-volatile memory module, error bits in the data can be corrected and the original data can be restored according to the ECC code.
机译:提供了一种用于可重写非易失性存储模块的数据写入方法。本方法包括压缩原始数据以生成第一数据,并确定第一数据的长度是否小于预定长度。本方法还包括当第一数据的长度不小于预定长度时,输出第一数据作为压缩数据。本方法还包括:生成与压缩数据相对应的ECC代码;根据压缩数据和ECC代码生成ECC帧;以及将ECC帧写入可重写非易失性存储模块中。因此,当从可重写非易失性存储模块中读取与原始数据相对应的数据时,可以根据ECC码来校正数据中的错误位并且可以恢复原始数据。

著录项

  • 公开/公告号US9336081B2

    专利类型

  • 公开/公告日2016-05-10

    原文格式PDF

  • 申请/专利权人 LI-CHUN LIANG;

    申请/专利号US201113071523

  • 发明设计人 LI-CHUN LIANG;

    申请日2011-03-25

  • 分类号G06F11/00;G06F11/10;H03M13/00;

  • 国家 US

  • 入库时间 2022-08-21 14:28:22

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