Method for electrical activation of dopant species in a GaN film

摘要

The method includes the steps of a) Providing a stack having a support substrate and a film of GaN having dopant species, b) Directly bonding a shielding layer having a thickness higher than 2 micrometers to the surface of the film of GaN, so as to form an activation structure, and c) Applying a thermal budget to the activation structure according to conditions allowing to electrically activate at least one portion of the dopant species.