'Process and device for synthesizing by vapor chemical deposition a material, in particular the diamond and process for forming by chemical vapor deposition a si-ge semiconductor.'

摘要

process and device for synthesizing by vapor chemical deposition a material, in particular the diamond and process for forming by chemical vapor deposition a semiconductor of type si-ge. a process for synthesizing by vapor chemical deposition (cvd) a material according to which a plasma is produced in a vacuum chamber in the vicinity of a substrate and whereby a carbon-bearing substance is introduced into the chamber and h 2 in order to produce in the chamber a gas comprising substances carrying reactive carbon atoms in the form of radicals or unsaturated molecules from which the synthesis of said material is carried out, and by the fact that the absorption and diffusion electromagnetic spectra The inelastic properties of the solid material to be synthesized are used to collect in these spectra the absorption frequencies that contribute to the reactions that lead to the formation of the solid material to be synthesized, and to the fact that energetic rays are produced in the form of a photon beam carrying amounts of energy determined by each of the frequencies corresponding to said absorption frequencies and d elastic fusion, which photon beam is injected into the plasma where, for energetic states of the solid material, an abortion of these photons having energy corresponding to these energetic states is performed by said carrier substance of the reactive carbon atoms.