Process for the treatment of silicon tetrachloride or germanium tetrachloride contaminated with at least one compound containing hydrogen.

摘要

Process and apparatus for the purification of silicon tetrachloride or germanium tetrachloride containing compounds of hydrogen.The present invention relates to a process for the purification of silicon tetrachloride or germanium tetrachloride contaminated with at least one compound containing hydrogen.In which the silicon tetrachloride or germanium tetrachloride to be purified is treated in a manner view by means of a cold plasma and silicon tetrachloride or germanium tetrachloride purified is isolated from the phase which has been treated in this way.The present invention also relates to a device for carrying out the process of the invention, which comprises a storage unit and of vaporization for silicon tetrachloride or germanium (4.1 and 5.1), which is connected via a connecting line with the entry of the reactor ( 4.3 or 5.3) with the control unit (4.4 or 5.4) for the production of discharges dieletricamente delayed whose output leads through a tube, both directly and indirectly through at least another reactor (5.5) to a condensing unit (4.5 or 5.11) with a container to collect downstream (4.6 or 5.12) is conectad Through an output line (4.6.2 or 5.12.1) a distillation unit (4.8 or 5.13) and, if appropriate, is equipped with a feed line (4.6.1) to the unit (4.1).