TUNNELING DIODE USING GRAPHENE-SILICON QUANTUM DOT HYBRID STRUCTURE AND METHOD FOR PREPARING SAME

摘要

Provided is a tunneling diode comprising a graphene-silicon quantum dot hybrid structure, the tunneling diode having enhanced diode performance and electrical properties by controlling the size of a silicon quantum dot and the doping concentration of graphene. A preferred tunneling diode, according to the present invention, can be used for a diode-based optoelectronic device.