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Tunneling diode using graphene-silicon quantum dot hybrid structure and method of manufacturing the same
Tunneling diode using graphene-silicon quantum dot hybrid structure and method of manufacturing the same
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机译:使用石墨烯-硅量子点混合结构的隧穿二极管及其制造方法
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摘要
Disclosed is a tunneling diode, which includes a graphene-silicon quantum dot hybrid structure, having improved performance and electrical characteristics by controlling the sizes of silicon quantum dots and the doping concentration of graphene. The ideal tunneling diode of the present disclosure may be utilized in diode-based optoelectronic devices.
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