首页>
外国专利>
COMPOSITION FOR ORGANIC SEMICONDUCTOR FILM FORMATION, ORGANIC SEMICONDUCTOR FILM, METHOD FOR PRODUCING ORGANIC SEMICONDUCTOR FILM, ORGANIC SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING ORGANIC SEMICONDUCTOR ELEMENT
COMPOSITION FOR ORGANIC SEMICONDUCTOR FILM FORMATION, ORGANIC SEMICONDUCTOR FILM, METHOD FOR PRODUCING ORGANIC SEMICONDUCTOR FILM, ORGANIC SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING ORGANIC SEMICONDUCTOR ELEMENT
The purpose of the present invention is to provide: a composition for organic semiconductor film formation, which enables the achievement of an organic semiconductor element that has high mobility, while being suppressed in variation of the mobility; an organic semiconductor film which uses this composition for organic semiconductor film formation; a method for producing this organic semiconductor film; an organic semiconductor element; and a method for manufacturing an organic semiconductor element. A composition for organic semiconductor film formation according to the present invention is characterized by containing: an organic semiconductor that is represented by formula A-1; a polymer; a solvent that has a boiling point of 150°C or more and an SP value of from 18 to 23 (inclusive); and a silicone compound that has a structure represented by formula D-1. CmH2m+1―La1―T―La2―CnH2n+1 (A-1)
展开▼
机译:本发明的目的是提供:一种用于有机半导体膜形成的组合物,其能够实现具有高迁移率的有机半导体元件,同时抑制迁移率的变化。使用该组合物形成有机半导体膜的有机半导体膜;该有机半导体膜的制造方法;有机半导体元件;以及用于制造有机半导体元件的方法。本发明的有机半导体膜形成用组合物的特征在于,含有:式A-1所示的有机半导体;和聚合物沸点为150℃以上,SP值为18〜23(含)的溶剂;具有式D-1表示的结构的有机硅化合物。 C m Sub> H 2m + 1 Sub> ―L a1 Sup> ―T―L a2 Sup> ―C n Sub> H 2n + 1 Sub>(A-1)
展开▼