首页> 外国专利> METHOD FOR MANUFACTURING MAGNESIUM DIBORIDE SUPERCONDUCTING THIN-FILM WIRE MATERIAL, AND MAGNESIUM DIBORIDE SUPERCONDUCTING THIN-FILM WIRE MATERIAL

METHOD FOR MANUFACTURING MAGNESIUM DIBORIDE SUPERCONDUCTING THIN-FILM WIRE MATERIAL, AND MAGNESIUM DIBORIDE SUPERCONDUCTING THIN-FILM WIRE MATERIAL

机译:二硼化镁超导薄膜线材的制造方法及二硼化镁超导薄膜线材的制造

摘要

The purpose of the present invention is to provide an optimum average particle size range for the purpose of increasing the pinning force and improving the Jc in an MgB2 thin-film wire material, and to provide a method for producing an MgB2 thin-film wire material having an optimum average particle size. Disclosed is a method for producing an MgB2 thin-film superconducting wire material, wherein the MgB2 thin-film superconducting wire material is characterized by being formed from aggregates of MgB2 particles characterized by each having a columnar structure of which the orientation is regulated in the direction perpendicular to the surface, wherein the volume fraction of MgB2 is 90% or more relative to the whole volume of the thin-film wire material, an MgB2 thin film having a film thickness of 1000 to 10000 nm inclusive is formed in the lateral direction, and the particles have an average particle size of 30 to 200 nm inclusive, preferably 40 to 100 nm inclusive.
机译:本发明的目的是提供最佳的平均粒径范围,以增加钉扎力并改善MgB 2 薄膜线材中的Jc,并提供一种制备方法。生产出具有最佳平均粒径的MgB 2 薄膜线材。本发明公开了一种MgB 2 薄膜超导线材的制造方法,其特征在于,所述MgB 2 薄膜超导线材由MgB <的聚集体形成。 Sub> 2 颗粒,其特征在于,每个颗粒具有在垂直于表面的方向上被调节取向的柱状结构,其中MgB 2 的体积分数相对于90%或更高在薄膜线材的整个体积中,在横向上形成膜厚度为1000至10000 nm(含)的MgB 2 薄膜,且颗粒的平均粒径为30实施例1至200nm至200nm,包括40nm至100nm。

著录项

  • 公开/公告号WO2016132522A1

    专利类型

  • 公开/公告日2016-08-25

    原文格式PDF

  • 申请/专利权人 HITACHI LTD.;

    申请/专利号WO2015JP54699

  • 申请日2015-02-20

  • 分类号H01B13;

  • 国家 WO

  • 入库时间 2022-08-21 14:16:52

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号