首页> 外文会议>Powder Metallurgy Congress amp; Exhibition(Euro PM205) vol.3; 20051002-05; Prague Congress Centre(CZ) >High-Pressure Synthesized Superconducting Nanostructural Magnesium Diboride-Based Materials
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High-Pressure Synthesized Superconducting Nanostructural Magnesium Diboride-Based Materials

机译:高压合成超导纳米结构二硼化镁基材料

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摘要

A high pressure-synthesized (HPS) magnesium-diboride-based material shows at 20 K critical current density higher than 100 kA/cm~2 up to 3 T field and higher than 10 kA/cm~2 to 5 T field. The monocrystalline magnesium diboride nanosized inclusions in the Mg-B-O superconductive "matrix" of the material strongly affect its superconducting characteristics: the samples with higher critical current density and irreversible fields exhibit a higher concentration of the Mg-B inclusions, so the Mg-B nanosized particles seem strongly influence the pinning forces in the material. Additions of Ta, Ti, Zr can increase critical current density of HPS magnesium-diboride-based material due to the absorption of impurity hydrogen to form hydrides of Ta, Ti, Zr, which prevents harmful magnesium hydride impurity phase from appearing, may prevent hydrogen from being introduced into the material structure and promotes the formation of a higher amount of Mg-B inclusions in the Mg-B-O matrix.
机译:高压合成(HPS)的二硼化镁基材料在20 K的临界电流密度下,在3 T电场以下均高于100 kA / cm〜2,而在10 TA / cm〜2至5 T电场下则更高。材料的Mg-BO超导“基体”中的单晶二硼化镁纳米尺寸包裹体强烈影响其超导特性:临界电流密度较高且不可逆场的样品显示Mg-B包裹体浓度较高,因此Mg-B纳米颗粒似乎强烈影响材料中的钉扎力。添加Ta,Ti,Zr可以增加HPS二硼化镁基材料的临界电流密度,这是因为吸收了杂质氢形成Ta,Ti,Zr的氢化物,从而防止了有害的氢化镁杂质相的出现,并可能阻止氢被引入到材料结构中,并促进了在Mg-BO基体中大量Mg-B夹杂物的形成。

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