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REDUCTION OF BACKSIDE PARTICLE INDUCED OUT-OF-PLANE DISTORTIONS IN SEMICONDUCTOR WAFERS
REDUCTION OF BACKSIDE PARTICLE INDUCED OUT-OF-PLANE DISTORTIONS IN SEMICONDUCTOR WAFERS
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机译:减少半导体晶片中背面粒子引起的面外畸变
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摘要
A pin mechanism and a method for reducing backside particle induced out-of-plane distortions in semiconductor wafers involving such pin mechanisms. Geometric parameters of the pin are optimized so as to maximize the height of a particle trapped between a backside of the wafer and one of the contact lands without exceeding a selected maximum out-of-plane distortion. These geometric parameters are optimized in various designs of the pin mechanism, such as a pin mechanism that includes secondary leaf-type flexures attached to the contact lands and a single stem attached to a base portion of a cross-member of the pin. An alternative pin mechanism includes notch-type flexures, as opposed to secondary leaf-type flexures, connected to the cross-member of the pin. Furthermore, a plurality of stems are attached to the base portion of the cross-member of the pin. Alternatively, such a pin mechanism may utilize a different number of stems (e.g., one stem).
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