2-DIMENSIONAL MATERIAL ETCHING APPARATUS AND METHOD OF PATTERNING 2-DIMENSIONAL MATERIAL USING THE SAME

摘要

Disclosed are a two-dimensional material etching apparatus and a method for patterning a two-dimensional material layer by using the same. The disclosed two-dimensional material layer etching apparatus includes: a stage where an object to be etched is placed; a light source for emitting light (for example, EUV or X-ray having a shorter wavelength than the same) with a shorter wavelength than a visible ray; a mask where a pattern to be transferred to the object to be etched is engraved; a fluid inlet for supplying a fluid onto the object to be etched; and a fluid absorption hole for absorbing a residual and a reactant after the fluid is supplied. The object to be etched is a graphene. The disclosed method for patterning the two-dimensional material layer includes the processes of: putting the object to be etched on the stage; irradiating a light to the object to be etched; supplying the fluid onto the object to be etched; and removing the fluid residual and the fluid reactant on the object to be etched. The object to be etched includes the graphene, and the wavelength of the light is shorter than the wavelength of the visible ray.