首页> 外国专利> METHOD AND SYSTEM FOR PROVIDING RARE EARTH MAGNETIC JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS

METHOD AND SYSTEM FOR PROVIDING RARE EARTH MAGNETIC JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS

机译:提供可用于自转矩转矩磁随机访问存储器应用中的稀土磁结的方法和系统

摘要

The present invention relates to a magnetic junction used in a magnetic device, and a method for providing the magnetic junction. The magnetic junction includes: a free layer, a pinned layer, and a nonmagnetic spacer layer between the free and pinned layers. The free layer is switchable between a plurality of stable magnetic states when a write current is applied to the magnetic junction. Each of the free and pinned layers has perpendicular magnetic anisotropy energy greater than out-of-plane demagnetization energy. At least one of the pinned and free layers includes a multilayer which includes at least one bilayer. Each of the bilayers has a first layer and a second layer. The first layer includes an alloy of a magnetic transition metal and a rare earth. The second layer includes an amorphous magnetic layer. The multilayer has a nonzero perpendicular magnetic anisotropy up to at least 400C.
机译:磁性结及其制造方法技术领域本发明涉及在磁性器件中使用的磁性结及其提供方法。磁性结包括:自由层,固定层以及在自由层和固定层之间的非磁性间隔层。当将写入电流施加到磁性结时,自由层可在多个稳定的磁性状态之间切换。每个自由层和钉扎层的垂直磁各向异性能均大于平面外退磁能。固定层和自由层中的至少一层包括多层,该多层包括至少一个双层。每个双层具有第一层和第二层。第一层包括磁性过渡金属和稀土的合金。第二层包括非晶磁性层。该多层具有至少为400℃的非零垂直磁各向异性。

著录项

  • 公开/公告号KR20160004959A

    专利类型

  • 公开/公告日2016-01-13

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20150094811

  • 发明设计人 TANG XUETI;LEE JANG EUN;

    申请日2015-07-02

  • 分类号H01L43/02;H01L43/08;H01L43/10;H01L43/12;

  • 国家 KR

  • 入库时间 2022-08-21 14:15:15

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