SILICENE MATERIAL LAYER AND ELECTRONIC DEVICE COMPRISING SAME

摘要

To provide a switching element such as a transistor, disclosed are a silicene material layer and an electronic device including the same. The silicon material layer has a two-dimensional comb structure of silicon atoms and is formed with a single layer or a double layer. The silicon material layer may include a region which is doped with at least one among group 1, group 2, group 16, and group 17 and doped with at least one of p-type dopant or n-type dopant. The present invention may provide the electronic device which includes the silicene material layer, may have an intermediate layer on the silicene layer, a gate insulating layer, and a gate electrode layer, and includes a tin film transistor.;COPYRIGHT KIPO 2016