Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices

摘要

The demand for improved electronic and optoelectronic devices has fuelled the development of epitaxial growth techniquesfor single-crystalline semiconductors. However, lattice and thermal expansion coefficient mismatch problems limit the optionsfor growth and integration of high-efficiency electronic and photonic devices on dissimilar materials. Accordingly, advancedepitaxial growth and layer lift-off techniques have been developed to address issues relating to lattice mismatch. Here, wereview epitaxial growth and layer-transfer techniques for monolithic integration of dissimilar single-crystalline materials forapplication in advanced electronic and photonic devices. We also examine emerging epitaxial growth techniques that involvetwo-dimensional materials as an epitaxial release layer and explore future integrated computing systems that could harnessboth advanced epitaxial growth and lift-off approaches.