首页> 外国专利> DEVICE FOR PROTECTING SOURCE BUSHING IN SEMICONDUCTOR ION IMPLANTING FACILITIES

DEVICE FOR PROTECTING SOURCE BUSHING IN SEMICONDUCTOR ION IMPLANTING FACILITIES

机译:在半导体离子注入设备中保护源衬套的设备

摘要

The present invention relates to an apparatus to protect a source bushing used for semiconductor ion implantation equipment. The apparatus to protect a source bushing of semiconductor ion implantation equipment according to an embodiment of the present invention comprises: a source head to receive a high voltage to generate ions; a source flange where a first side of the source head is fixated; a source liner separated apart from the source head and having a ground potential; a source chamber where the source liner is fixated and separated apart from the source flange; a source bushing of which both sides are fixated to the source chamber and source flange and made up of insulation material; an electro-head which is the opposite side of the first side of the source head and formed in a second side adjacent to the source liner; and a path extension member of which one side is fixated to the source liner, the other side is separated apart from the source flange to extend a path that contaminant generated at a location close to the electro-head reaches the source bushing.
机译:本发明涉及一种保护用于半导体离子注入设备的源衬套的设备。根据本发明实施例的用于保护半导体离子注入设备的源套管的设备包括:源头,用于接收高压以产生离子;以及固定源头的第一侧的源法兰;源极衬套与源极头部分开并具有接地电位;源室,源衬套固定并与源法兰分开。源套管,其两侧均固定在源室和源法兰上,并由绝缘材料制成;电头,其与源头的第一侧的相反侧并形成在与源极衬垫相邻的第二侧中;路径延伸构件的一侧固定到源衬套,另一侧与源凸缘分开,以延伸一条路径,使在靠近电头的位置产生的污染物到达源衬套。

著录项

  • 公开/公告号KR20160052939A

    专利类型

  • 公开/公告日2016-05-13

    原文格式PDF

  • 申请/专利权人 KIM JONG HOON;HYUNTECH;LEE HYUN SOO;

    申请/专利号KR20140148431

  • 发明设计人 LEE HYUN SOO;KIM JONG HOON;

    申请日2014-10-29

  • 分类号H01J37/317;

  • 国家 KR

  • 入库时间 2022-08-21 14:14:28

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号