LOW TEMPERATURE SILICON NITRIDE FILMS USING REMOTE PLASMA CVD TECHNOLOGY

摘要

Embodiments of the present invention generally provide methods for forming a silicon nitride layer on a substrate. In one embodiment, a method of forming a silicon nitride layer using remote plasma enhanced chemical vapor deposition (CVD) at a temperature of less than 300 degrees Celsius is disclosed. Precursors for remote plasma CVD processes include tris (dimethylamino) silane (TRIS), dichlorosilane (DCS), trisilylamine (TSA), bis-t-butyl Bis-t-butylaminosilane (BTBAS), hexachlorodisilane (HCDS), or hexamethylcyclotrisilazane (HMCTZ).