首页> 外国专利> TRANSISTOR HAVING AT LEAST ONE BENDING DEFORMATION OF GRAPHENE TO CONTROL ON/OFF OF ELECTRICITY, GRAPHENE SINGLE ELECTRONIC TRANSISTOR, AND ELECTRONIC TUNNELING GRAPHENE TRANSISTOR

TRANSISTOR HAVING AT LEAST ONE BENDING DEFORMATION OF GRAPHENE TO CONTROL ON/OFF OF ELECTRICITY, GRAPHENE SINGLE ELECTRONIC TRANSISTOR, AND ELECTRONIC TUNNELING GRAPHENE TRANSISTOR

机译:晶体管具有石墨烯的至少一种弯曲变形,以控制电,石墨烯单电子晶体管和电子隧穿石墨烯晶体管的开/关

摘要

The present invention relates to a transistor having at least one bending deformation of graphene to control on/off of electricity, a graphene single electronic transistor, and an electronic tunneling graphene transistor. The transistor comprises: a source electrode; a drain electrode; and at least one graphene connected to the source electrode. Therefore, a processing speed of the transistor can be increased.
机译:技术领域本发明涉及一种具有至少一个石墨烯的弯曲变形以控制电流的导通/截止的晶体管,石墨烯单电子晶体管和电子隧穿石墨烯晶体管。该晶体管包括:源电极;以及漏电极;至少一个石墨烯连接到源电极。因此,可以提高晶体管的处理速度。

著录项

  • 公开/公告号KR20160079213A

    专利类型

  • 公开/公告日2016-07-06

    原文格式PDF

  • 申请/专利权人 LEE YOUN TEK;

    申请/专利号KR20140190222

  • 发明设计人 LEE YOUN TEKKR;

    申请日2014-12-26

  • 分类号H01L41/08;C01B31/04;H01L41/22;

  • 国家 KR

  • 入库时间 2022-08-21 14:14:05

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号