LOW TEMPERATURE POLYCRYSTALLINE SILICON THIN FILM PRECLEANING METHOD AND PREPARATION METHOD, AND SYSTEM FOR MAKING LOW TEMPERATURE POLYCRYSTALLINE SILICON THIN FILM

摘要

The present invention belongs to a liquid crystal display technology area, particularly as for the production method of low-temperature polycrystalline silicon thin film, includes the following steps: to place from the bottom on a substrate and then the buffer layer and the amorphous silicon layer the first stage of growth; A second step of making higher than room temperature by heating the amorphous silicon layer, the amorphous silicon layer prior to washing; Using an excimer laser beam is irradiated to the amorphous silicon layer after the washing of the second step and the third step such that the amorphous silicon was converted to a polycrystalline silicon. The invention also provides a manufacturing system of such a polycrystalline silicon thin film. The present invention by improving on the low-temperature polysilicon thin-film manufacturing system, scheduled washing method, improve the non-uniform state of the thickness of the amorphous silicon layer, thereby to form the uniformity of the polycrystalline silicon thin film by ELA irradiation phone at a later stage. ;