首页> 外国专利> MANUFACTURING METHOD OF SUBSTRATE GRAPHENE GROWTH WITHOUT USING METAL CATALYST AND SUBSTRATE GRAPHENE GROWTH WITHOUT USING METAL CATALYST

MANUFACTURING METHOD OF SUBSTRATE GRAPHENE GROWTH WITHOUT USING METAL CATALYST AND SUBSTRATE GRAPHENE GROWTH WITHOUT USING METAL CATALYST

机译:不使用金属催化剂的基质石墨烯生长的制造方法和不使用金属催化剂的基质石墨烯生长的制造方法

摘要

A kind of method of the manufacturing method without growth graphene in the substrate of catalyst is provided, includes the following steps: (one) preparation without catalyst layer substrate; (2) etching gas of carbonaceous gas is provided, is carried out low pressure chemical vapor deposition (LPCVD); (3) supply etching gas works as supply carbonaceous gas without catalyst layer to grow graphene in no catalyst layer; D grows graphene in substrate, and saving bit by bit continuous removal institute in no catalyst, whether there is or not catalyst layers, and LPCVD process steps c is simultaneously continuously carried out by the etching gas. ;The 2016 of copyright KIPO submissions
机译:提供了一种在催化剂的基材中不生长石墨烯的制造方法,包括以下步骤:(一)制备不具有催化剂层的基材; (2)提供含碳气体的蚀刻气体,进行低压化学气相沉积(LPCVD); (3)供给蚀刻气体作为不含催化剂层的含碳气体在无催化剂层中生长石墨烯。 D使石墨烯在衬底中生长,并且在没有催化剂的情况下(无论是否有催化剂层)一点一点地连续地进行节省,并且通过蚀刻气体同时连续地进行LPCVD工艺步骤c。 ; 2016年版权KIPO提交文件

著录项

  • 公开/公告号KR20160095972A

    专利类型

  • 公开/公告日2016-08-12

    原文格式PDF

  • 申请/专利权人 LEE YOUN TEK;

    申请/专利号KR20150017662

  • 发明设计人 LEE YOUN TEK;

    申请日2015-02-04

  • 分类号C01B31/04;

  • 国家 KR

  • 入库时间 2022-08-21 14:13:47

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