Fabrication method of metal gates-embedded nanochannel

摘要

The present invention relates to a method of manufacturing a nanochannel including a metal gate using chemical vapor deposition and planarization processes. A method of fabricating a nanochannel that includes a metal gate in accordance with one aspect of the present invention includes a first step of forming a first layer 102 on an upper surface of a substrate 101, Forming a first layer 102 on which the second layer 103 is not formed by using the second layer 103 as an etch mask; A third step of removing the second layer 103 and a fourth step of forming a third layer 104 on the substrate 101 and the first layer 102 using an isotropic deposition process The third layer 104 on the substrate 101 and the first layer 102 is removed and the third layer 104 on the side of the first layer 101 is removed using an anisotropic etching process, A fourth step of forming a fourth layer 105 on the substrate 101, the first layer 102 and the third layer 104, the seventh step of leaving only the first layer 102 and the third layer 104, An eighth step of planarizing the layer 104 so as to be exposed, A ninth step of forming a fifth layer 106 on the first layer 102, the third layer 104 and the fourth layer 105, the ninth step of forming the fifth layer 106 on the third layer A third layer 104, a fourth layer 106, and a third layer 104 using an isotropic deposition process to remove a portion of the fifth layer 106 so as to be perpendicular to the longitudinal direction of the first layer 102, A third layer 104, and a fourth layer 106 are formed by using an anisotropic etching process in an eleventh step of forming a sixth layer 107 on the first layer 105 and the fifth layer 106 Removing the sixth layer 107 on the fifth layer 106 and leaving only the sixth layer 107 on the side of the fifth layer 106; A seventh step of forming a seventh layer 108 on the third layer 104, the fourth layer 105, the fifth layer 106 and the sixth layer 107; The sixth layer 107 is etched to remove the exposed sixth layer 107, and the fifth layer 106 and the seventh layer 108 are used as an etching mask. And the substrate 1 The first layer 102, the third layer 104 and the fourth layer 105 are anisotropically etched so that the first layer 102, the third layer 104 and the fourth layer 105 are exposed so that the first layer 102, And removing the fifth layer 106 and the seventh layer 108 so that the fourth layer 105 is exposed.