首页> 外国专利> HIGH DENSITY HELICON PLASMA SOURCE FOR WIDE RIBBON ION BEAM GENERATION

HIGH DENSITY HELICON PLASMA SOURCE FOR WIDE RIBBON ION BEAM GENERATION

机译:高密度氦等离子体源,可产生宽范围的碳带离子束

摘要

by using one or more of the helicon plasma source, the ion source capable of generating a high density the width of the wide ribbon ion beam is disclosed. In addition to the helicon plasma source (s), the ion source further includes a diffusion chamber. Diffusion chamber is oriented along the same axis with the cylindrical dielectric of the helicon plasma source has a fixed extraction opening. In one embodiment, the dual helicon plasma source located on the opposite ends of the diffusion chamber are utilized to produce a more uniform ion beam extraction. In yet another embodiment, it is used a multi-cusped magnetic field (multicusp magnetic field) in order to further enhance the uniformity of the extracted ion beam. ;
机译:通过使用一个或多个螺旋等离子体源,公开了一种能够在宽带状离子束的宽度上产生高密度的离子源。除了螺旋等离子体源之外,离子源还包括扩散室。扩散室的方向与螺线管等离子体源的圆柱电介质的轴线相同,并具有固定的提取开口。在一实施例中,位于扩散室相对两端的双螺旋等离子体源被用来产生更均匀的离子束提取。在又一个实施例中,为了进一步增强所提取的离子束的均匀性,使用了多尖端磁场(multicusp磁场)。 ;

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