SOL-GEL SOLUTION FOR USE IN FORMING FERROELECTRIC THIN FILM

摘要

(Problem to be Solved) When forming a PZT ferroelectric thin film, one layer to be applied by a sol-gel method can be thickly applied, and after the preliminary firing and firing, the PZT film is formed into a cracky and dense film structure The present invention provides a sol-gel solution for forming a ferroelectric thin film. A sol-gel solution for forming a ferroelectric thin film includes a PZT-based compound, a polymer compound for adjusting viscosity containing polyvinylpyrrolidone, and an organic dopant containing a formamide-based solvent, wherein the PZT- , Wherein the molar ratio of the polyvinylpyrrolidone to the PZT-based compound in terms of the monomer is 1: 0.1 to 0.5 in terms of a monomer, and the formamide- By containing 3% by mass to 13% by mass of the gel solution, it is possible to increase the thickness of one layer to be applied at one time, to improve the production efficiency, and to enable the dense film formation after cracking and firing.