Thermoelectric telluride materials formed complex-crystalline structure by interstitial doping

摘要

The present invention relates to a kind of tellurides (tellurium) base thermoelectricity materials, and wherein the addition of stacking fault forms gap dopant material. The thermoelectric material has an element cell, wherein stacking five layers based on TE elements A-B-A-C-A, and has a kind of structure, wherein other element cells of one end of the unit cell and element of unit end, which are stacked with, repeatedly passes through Van der Waals force. Thermoelectric material according to the present invention based on TE, interstitial element, between dopant material, it is located at iteratively stack element A and adjacent for gap, thus the iteratively generation of stacked unit cell stacking fault, to form polycrystalline structure different from element cell, being formed simultaneously polycrystalline structure has twins formed therein by increasing gap dopant material, one of wherein A one of is tellurium and selenium (selenium), and B is) and antimony bismuth (antimony), and C for one of bismuth and antimony. Therefore, which is in interstitial positions, by the way that the destruction of calking dopant material such as silver-colored (Ag) with the thermoelectric material trellis filling thermoelectric material based on TE is added, and forms new polycrystalline structure by stacking fault and twin, so as to improve thermoelectricity capability;The 2016 of copyright KIPO submissions