N- N-DOPED GRAPHENE QUANTUM SHEET AND RPODUCING METHOD OF THE SAME

摘要

The present invention relates to a method for producing an N-doped graphene quantum sheet comprising applying a nitrogen plasma to a single-layer graphene formed on a catalyst layer by chemical vapor deposition, and a method for producing an N-doped graphene quantum sheet, Doped graphene quantum sheet containing a doping amount.