One-Step Synthesis of N-doped Graphene Quantum Sheets from Monolayer Graphene by Nitrogen Plasma

摘要

Graphene quantum dots (GQDs) exhibit great potential for various optoelectronic applications due to their size-dependent and edge-sensitive photoluminescence properties. Previously, GQDs were mainly synthesized from graphene oxides by chemical exfoliation under strongly acidic environment or by multi-step lithographic methods including masking, patterning and lift-off, which hindered the efficient preparation of high-quality GQDs for practical applications. On the other hand, nitrogen-functionaliza-tion or doping is known to be very helpful to tailor the intrinsic properties of GQDs, but it needs further complicated wet-chemical reactions. Atom-thick GQDs can be called graphene quantum sheets (GQSs), which is expected to show stronger quantum effects derived from monolayer graphene, compared to GQDs obtained from graphene oxides (GOs) or carbon fibers.