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SUBSTRATE FOR SURFACE-ENHANCED RAMAN-SCATTERING ANALYSIS

机译:用于表面增强拉曼散射分析的基质

摘要

FIELD: physics, optics.;SUBSTANCE: substrate has a semiconductor surface having whisker crystals coated with a film of a metal selected from a group consisting of silver, gold, platinum, copper and/or alloys thereof. The material for the semiconductor surface used is a mixed nitride of aluminium, gallium and indium. Each formed whisker crystal has a linear defect inside. The surface density of the whisker crystals, having a linear defect inside, ranges from 108/cm2 and 1010/cm2, and the length of the whisker crystals ranges from 0.2 mcm to 2.0 mcm, and the diameter of the whisker crystals ranges from 40 nm to 150 nm. The ratio of the length of the whisker crystals having a linear defect inside to their diameter ranges from 5 to 50, and the thickness of the metal film on the semiconductor surface ranges from 50 nm to 150 nm.;EFFECT: obtaining a substrate for surface-enhanced Raman-scattering analysis.;13 cl, 9 dwg, 3 ex
机译:领域:基底:衬底具有半导体表面,该半导体表面具有晶须晶体,该晶须晶体覆盖有选自银,金,铂,铜和/或其合金的金属膜。用于半导体表面的材料是铝,镓和铟的混合氮化物。每个形成的晶须晶体内部都具有线性缺陷。内部具有线性缺陷的晶须晶体的表面密度范围为10 8 / cm 2 和10 10 / cm 2 ,晶须晶体的长度在0.2 mcm至2.0 mcm的范围内,晶须晶体的直径在40 nm至150 nm的范围内。内部具有线性缺陷的晶须晶体的长度与直径之比为5至50,半导体表面上金属膜的厚度为50 nm至150 nm;效果:获得用于表面的衬底增强拉曼散射分析。; 13 cl,9 dwg,3 ex

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