METHOD OF DIFFRACTION PERIODIC MICROSTRUCTURE MAKING BASED ON POROUS SILICON

摘要

FIELD: chemistry.;SUBSTANCE: method of diffraction periodic microstructure making based on porous silicon includes forming specified diffraction periodic microstructure with help of ions implantation of noble or transition metals through surface mask with energy of 5-100 keV. At that, exposure dose provides concentration of metal atoms in irradiated substrate of silicon of 2.5·10²⁰-6.5·10²³ atoms/cm³. Ion beam current density is 2·10¹²-1·10¹⁴ ion/(cm²·s) at substrate temperature during exposure of 15-450 °C.;EFFECT: technical result consists in possibility of making diffraction periodic microstructure based on porous silicon with nanoparticles of different metals in vacuum.;1 cl, 20 dwg