A magnetron sputter process - and - a magnetron sputtering apparatus

摘要

A magnetron - sputtering processes, comprising:The sputtering process carried out by generating a magnetron - discharge in the vicinity of a plurality of in rectangular form and is formed which is arranged on the same height targets (8a, 8b, 8c, 8d), wherein the targets (8a, 8b, 8c, 8d) close to each other and are arranged next to one another, so that side wall portions of adjacent targets (8a, 8b, 8c, 8d) lie directly opposite one another, wherein each target (8) in a vacuum atmosphere is electrically independent,Setting of the space between the adjacent targets (8a, 8b, 8c, 8d) to a distance between 1 and 3 millimeters, so that an anomalous electric discharge between adjacent targets (8a, 8b, 8c, 8d) does not occur and also a plasma between the adjacent targets (8a, 8b, 8c, 8d) is not generated.andApplication of voltages with a phase difference of 180 degrees and periodically alternately at the adjacent targets (8a, 8b, 8c, 8d) in a predetermined timing during the sputtering process, wherein the voltages to the adjacent targets (8a, 8b, 8c, 8d) are applied are pulsed dc voltages.