Electrode materials and interfacial layers to minimize chalcogenide interface resistance

摘要

A phase change memory cell having a reduced electrode-chalcogenide interface resistance and a method of fabricating the phase change memory cell are disclosed: An interface layer is formed between an electrode layer and a chalcogenide layer that provides a reduced resistance between the chalcogenide-based phase change memory layer and the electrode layer. Exemplary embodiments contemplate that the interface layer comprises a tungsten carbide, a molybdenum carbide, a tungsten boride or a molybdenum boride or a combination thereof. In an exemplary embodiment, the interfacial layer has a thickness of between about 1 nm and about 10 nm.