A method for the electrolytic deposition of gold to a copper - seed layer, in order to form a gold metallization structure

摘要

An electrically conductive barrier layer on a semiconductor substrate is formed in such a way that the barrier layer covers a first component connection. A seed layer is formed on the barrier layer. The seed layer comprises a gold different noble metal. The substrate is masked in such a way that a first mask opening to the side of the first connection is aligned. A unmasked section of the seed layer is using a gold electrolyte solution electroplated in such a way that a first gold metallization structure is formed in the first mask opening. The mask, the masked sections of the seed layer and the barrier layer are removed. The noble metal out of the unmasked section of the seed layer is in the first gold metallization structure is diffused. The first gold metallization structure, by means of the barrier layer is electrically connected with the first terminal.