There is provided a method of using a plasma enhanced chemical vapor deposition device (100) comprising a deposition chamber (10) comprising: - a set of shields (3a-3f) disposed on the circumference of the inner wall of the enclosure (10) and forming, with the enclosure, an anode-type electrode, - a cathode-type main electrode (4) arranged along a central axis of the enclosure (10) and for supporting at least one object to be treated, said method being characterized in that it comprises a step of activating a cathode-type auxiliary electrode (8) in at least one of the following phases: plasma cleaning, - a plasma deposition phase in which the main electrode is activated, said cathode-type auxiliary electrode (8) extending parallel to the internal surface of the protective shield set (3a-3f) and near the set of shields (3).
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