首页> 外国专利> AN AQUEOUS POLISHING AGENT COMPRISING SOLID POLYMER PARTICLES AND TWO COMPLEXING AGENTS AND ITS USE IN A PROCESS FOR POLISHING PATTERNED AND UNSTRUCTURED METAL SURFACES

AN AQUEOUS POLISHING AGENT COMPRISING SOLID POLYMER PARTICLES AND TWO COMPLEXING AGENTS AND ITS USE IN A PROCESS FOR POLISHING PATTERNED AND UNSTRUCTURED METAL SURFACES

机译:包含固体聚合物颗粒和两种络合剂的水性抛光剂及其在抛光图案化和非结构化金属表面的过程中的用途

摘要

An aqueous CMP agent, comprising (A) solid polymer particles interacting and forming strong complexes with the metal of the surfaces to be polished; (B) a dissolved organic non-polymeric compound interacting and forming strong, water-soluble complexes with the metal and causing an increase of the material removal rate MRR and the static etch rate SER with increasing concentration of the compound (B); and (C) a dissolved organic non-polymeric compound interacting and forming slightly soluble or insoluble complexes with the metal, which complexes are capable of being adsorbed by the metal surfaces, and causing a lower increase of the MRR than the compound (B) and a lower increase of the SER than the compound (B) or no increase of the SER with increasing concentration of the compound (C); a CMP process comprising selecting the components (A) to (C) and the use of the CMP agent and process for polishing wafers with ICs.
机译:一种水性CMP剂,其包含(A)与待抛光表面的金属相互作用并形成强配合物的固体聚合物颗粒;和(B)溶解的有机非聚合化合物与金属相互作用并形成强的水溶性络合物,并随着化合物(B)浓度的增加而引起材料去除速率MRR和静态蚀刻速率SER的增加; (C)溶解的有机非聚合化合物与金属相互作用并形成与金属的溶解度或不溶性配合物,该配合物能够被金属表面吸附,并导致比化合物(B)的MRR升高幅度较小;和SER的增加低于化合物(B),或者随着化合物(C)浓度的增加,SER没有增加; CMP方法包括选择组分(A)至(C)以及CMP剂的用途和用IC抛光晶片的方法。

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