PERYLENE TETRACARBOXYLIC ACID BISIMIDE DERIVATIVE, n-TYPE SEMICONDUCTOR, PROCESS FOR PRODUCING n-TYPE SEMICONDUCTOR, AND ELECTRONIC DEVICE

摘要

The present invention provides a perylene tetracarboxylic acid bisimide derivative which enables the formation of an n-type semiconductor having high carrier mobility and has superior solubility. The perylene tetracarboxylic acid bisimide derivative is a perylene tetracarboxylic acid bisimide derivative represented by the following chemical formula (I), a tautomer or stereoisomer of the perylene tetracarboxylic acid bisimide derivative, or a salt of the perylene tetracarboxylic acid bisimide derivative or the tautomer or stereoisomer, In the chemical formula (I), R 1 to R 6 each represents a hydrogen atom, organooligosiloxane, or any substituent, at least one of R 1 to R 6 represents a monovalent substituent derived from organooligosiloxane, L 1 and L 2 each represents a single bond or a linking group, R 7 to R 10 each represents a lower alkyl group or a halogen, and o, p, q, and r each represents an integer from 0 to 2.