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SURFACE TREATMENT METHOD OF PLACING TABLE, PLACING TABLE AND PLASMA PROCESSING DEVICE

机译:摆台的表面处理方法,摆台和等离子体处理装置

摘要

PROBLEM TO BE SOLVED: To provide a technique for stabilizing plasma in a processing container, in a plasma processing apparatus applying a high frequency power between an upper electrode and a metal placing table also serving as the lower electrode.SOLUTION: Following to first blast processing for blowing fine particles 100 of alumina to the placing surface of a metal placing table 3 provided in a processing container 2 and also serving as a lower electrode, second blast processing for blowing fine particles 101 of dry ice is performed. Consequently, irregular corners formed by blowing fine particles 100 of alumina are rounded. Impedance between a wafer W and the placing table 3 is reduced in a high frequency current path from a high frequency power supply 51 via a gas supply section 5 (upper electrode), a wafer W and the placing table 3 to the earth. Since formation of a current path from the plasma generation region toward the sidewall of processing container 2 is suppressed, the plasma is stabilized and stabilized plasma processing can be carried out.SELECTED DRAWING: Figure 2
机译:解决的问题:提供一种在上电极和也用作下电极的金属放置台之间施加高频功率的等离子处理设备中,用于稳定处理容器中的等离子体的技术。为了将氧化铝细颗粒100吹到设置在处理容器2中并且还用作下电极的金属放置台3的放置表面上,执行用于吹干冰细颗粒101的第二喷砂处理。因此,通过吹送氧化铝细颗粒100而形成的不规则拐角被弄圆。在从高频电源51经由气体供给部5(上部电极),晶片W和载置台3到大地的高频电流路径中,晶片W与载置台3之间的阻抗减小。由于抑制了从等离子体产生区域到处理容器2的侧壁的电流路径的形成,因此等离子体稳定并且可以进行稳定的等离子体处理。图2

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